Discrete Semiconductor Products

VBO52-12NO7

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BIPOLAR MODULE - DIODE PWS-D FLAT/ BOX

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Discrete Semiconductor Products

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BIPOLAR MODULE - DIODE PWS-D FLAT/ BOX

Technical Specifications

Parameters and characteristics for this part

Specification	VBO52-12NO7

Current - Average Rectified (Io)	52 A
Current - Reverse Leakage @ Vr	40 µA
Diode Type	Single Phase
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	PWS-D
Supplier Device Package	PWS-D
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	20 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.07 V
Voltage - Peak Reverse (Max)	1.2 kV

Bipolar Module - Diode PWS-D Flat

Part	Technology	Diode Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature [Min]	Operating Temperature [Max]	Current - Average Rectified (Io)	Package / Case	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - Peak Reverse (Max)	Voltage - Forward (Vf) (Max) @ If [Max]
LITTELFUSE VBO52-08NO7	Standard	Single Phase	1.14 V	-40 °C	150 °C	52 A	PWS-D	PWS-D	Chassis Mount	100 µA	800 V
LITTELFUSE VBO52-18NO7	Standard	Single Phase		-40 °C	150 °C	52 A	PWS-D	PWS-D	Chassis Mount	300 µA	1.8 kV	1.8 V
LITTELFUSE VBO52-16NO7	Standard	Single Phase		-40 °C	150 °C	52 A	PWS-D	PWS-D	Chassis Mount	300 µA	1.6 kV	1.8 V
LITTELFUSE VBO52-12NO7	Standard	Single Phase	20 A	-40 °C	150 °C	52 A	PWS-D	PWS-D	Chassis Mount	40 µA	1.2 kV	1.07 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diodes in various packages made for main rectification in 1 phase bridge configurations.

Technical documentation and resources