IXTN60N50L2
ActiveDISC MOSFET N-CH LINEAR L2 SOT-227B(MINI
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IXTN60N50L2
ActiveDISC MOSFET N-CH LINEAR L2 SOT-227B(MINI
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXTN60N50L2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 53 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 610 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 24000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 735 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
IXTN60N50L2 Series
Disc Mosfet N-CH Linear L2 SOT-227B(mini
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Package / Case | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Littelfuse/Commercial Vehicle Products | -55 °C | 150 °C | 53 A | 610 nC | 30 V | 100 mOhm | MOSFET (Metal Oxide) | 4.5 V | Chassis Mount | 24000 pF | 500 V | 735 W | SOT-227-4 miniBLOC | N-Channel | 10 V | SOT-227B |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 50.34 | |
| 10 | $ 44.85 | |||
| 100 | $ 39.37 | |||
Description
General part information
IXTN60N50L2 Series
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA). When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are "extended" when the positive feedback of electro-thermal instability is suppressed, giving rise to larger "operating windows." The FBSOAs are guaranteed at 75°C.
Documents
Technical documentation and resources