Discrete Semiconductor Products

RJK1001DPN-E0#T2

Obsolete

NCH SINGLE POWER MOSFET 100V 80A 5.5MOHM TO-220AB

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Discrete Semiconductor Products

Obsolete

NCH SINGLE POWER MOSFET 100V 80A 5.5MOHM TO-220AB

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1001DPN-E0#T2

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	147 nC
Input Capacitance (Ciss) (Max) @ Vds	10000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)

Nch Single Power Mosfet 100V 80A 5.5Mohm To-220Ab

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
Renesas Electronics Corporation RJK1001DPN-E0#T2	10000 pF	150 °C	147 nC	200 W	5.5 mOhm	100 V	MOSFET (Metal Oxide)	N-Channel	Through Hole	TO-220-3	80 A	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	83	$ 3.63

General part information

The RJK1001DPN-E0 is a Nch Single Power Mosfet 100V 80A 5.5Mohm To-220Ab.

Technical documentation and resources