Discrete Semiconductor Products

MCAC38N10Y-TP

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MOSFET N-CH 100 38A DFN5060

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Discrete Semiconductor Products

Active

MOSFET N-CH 100 38A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC38N10Y-TP

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1051 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	59 W
Rds On (Max) @ Id, Vgs	17.5 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type
Micro Commercial Components MCAC38N10Y-TP	Surface Mount	59 W	100 V	MOSFET (Metal Oxide)	-55 °C	150 °C	1051 pF	8-PowerTDFN	16 nC	20 V	2.5 V	DFN5060	17.5 mOhm	4.5 V 10 V	38 A	N-Channel

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General part information

N-Channel 100 V 38A 59W (Tj) Surface Mount DFN5060

Technical documentation and resources