Specification	NTMYS8D0N04CTWG

Current - Continuous Drain (Id) @ 25°C	49 A, 16 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Rds On (Max) @ Id, Vgs	8.1 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NTMYS8D0N04C Series

Power MOSFET 40 V, 49 A, 8.1Ω Single N-Channel

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
ON Semiconductor NTMYS8D0N04CTWG	10 nC	N-Channel	10 V	16 A 49 A	625 pF	-55 °C	175 ░C	20 V	40 V	Surface Mount	MOSFET (Metal Oxide)	5	LFPAK4	6	SOT-1023 4-LFPAK	8.1 mOhm	3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance.

Technical documentation and resources