Discrete Semiconductor Products

MIW50N65H-BP

Obsolete

IGBT

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

IGBT

Technical Specifications

Parameters and characteristics for this part

Specification	MIW50N65H-BP

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	186 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	88 ns
Supplier Device Package	TO-247-3
Switching Energy	1.59 mJ, 1.34 mJ
Td (on/off) @ 25°C	404 ns, 69 ns
Test Condition [custom]	400 V, 15 V
Test Condition [custom]	10 Ohm
Test Condition [custom]	50 A
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge	Power - Max [Max]	IGBT Type	Td (on/off) @ 25°C	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Test Condition [custom]	Test Condition [custom]	Test Condition [custom]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type	Current - Collector Pulsed (Icm)	Switching Energy	Supplier Device Package
Micro Commercial Components MIW50N65H-BP	-55 °C	175 ░C	TO-247-3	186 nC	250 W	Trench Field Stop	69 ns 404 ns	1.9 V	650 V	15 V 400 V	10 Ohm	50 A	80 A	88 ns	Through Hole	200 A	1.34 mJ 1.59 mJ	TO-247-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Trench Field Stop 650 V 80 A 250 W Through Hole TO-247-3

Technical documentation and resources