Deep-Dive with AI
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Deep-Dive with AI
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Technical Specifications
Parameters and characteristics for this part
| Specification | DTB713ZMT2L |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 200 mA |
| Current - Collector Cutoff (Max) [Max] | 500 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 140 hFE |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Power - Max [Max] | 150 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Supplier Device Package | VMT3 |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.50 | |
| Digi-Reel® | 1 | $ 0.50 | ||
| Tape & Reel (TR) | 8000 | $ 0.10 | ||
| 16000 | $ 0.09 | |||
| 24000 | $ 0.09 | |||
| 40000 | $ 0.08 | |||
| 56000 | $ 0.08 | |||
| 80000 | $ 0.08 | |||
Description
General part information
DTB713 Series
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 30 V 200 mA 260 MHz 150 mW Surface Mount VMT3
Documents
Technical documentation and resources