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Optoelectronics
VSMY385010-GS18
ActiveVishay General Semiconductor - Diodes Division
EMITTER IR 850NM 70MA SMD
Deep-Dive with AI
Search across all available documentation for this part.
Optoelectronics
VSMY385010-GS18
ActiveVishay General Semiconductor - Diodes Division
EMITTER IR 850NM 70MA SMD
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VSMY385010-GS18 |
|---|---|
| Current - DC Forward (If) (Max) | 70 mA |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Orientation | Top View |
| Package / Case | 2-SMD, J-Lead |
| Radiant Intensity (Ie) Min @ If [Min] | 5.5 mW/sr |
| Type | Infrared (IR) |
| Viewing Angle | 120 ° |
| Voltage - Forward (Vf) (Typ) | 1.6 V |
| Wavelength | 850 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 8000 | $ 0.27 | |
| 16000 | $ 0.26 | |||
| 24000 | $ 0.25 | |||
| 40000 | $ 0.24 | |||
Description
General part information
MY385010 Series
Infrared (IR) Emitter 850nm 1.6V 70mA 5.5mW/sr @ 70mA 120° 2-SMD, J-Lead
Documents
Technical documentation and resources
No documents available