Discrete Semiconductor Products

IXTH48P20P

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 200 V, 48 A, 0.085 OHM, TO-247, THROUGH HOLE

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN Datasheet

Discrete Semiconductor Products

IXTH48P20P

Active

Littelfuse/Commercial Vehicle Products

POWER MOSFET, P CHANNEL, 200 V, 48 A, 0.085 OHM, TO-247, THROUGH HOLE

Deep-Dive with AI

DocumentsProduct Change Notice EN Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH48P20P

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	462 W
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	TO-247 (IXTH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTH48N65X2 Series

DiscMSFT NChUltraJnctn X2Class TO-247AD

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXTH48N65X2	10 V	TO-247 (IXTH)	Through Hole	650 V	MOSFET (Metal Oxide)	4420 pF	48 A	4.5 V	77 nC	68 mOhm	660 W	-55 °C	150 °C	TO-247-3	30 V	N-Channel
Littelfuse/Commercial Vehicle Products IXTH48P20P	10 V	TO-247 (IXTH)	Through Hole	200 V	MOSFET (Metal Oxide)		48 A	4.5 V				-55 °C	150 °C	TO-247-3	20 V	P-Channel	462 W	85 mOhm	103 nC	5400 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 11.21
		30	$ 9.08
		120	$ 8.54
		510	$ 7.74
		1020	$ 7.10

Description

General part information

IXTH48N65X2 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet