Discrete Semiconductor Products

PBSS8110TVL

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PBSS8110T/SOT23/TO-236AB

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Discrete Semiconductor Products

Active

PBSS8110T/SOT23/TO-236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS8110TVL

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max [Max]	Supplier Device Package	Operating Temperature	Package / Case	Vce Saturation (Max) @ Ib, Ic	Grade	Transistor Type	Qualification	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Freescale Semiconductor - NXP PBSS8110Z,135	Surface Mount	100 V	1 A	150 hFE	1.4 W	SOT-223	150 °C	TO-261-4 TO-261AA	200 mV	Automotive	NPN	AEC-Q100	100 MHz	100 nA
Freescale Semiconductor - NXP PBSS8110TVL	Surface Mount	100 V	1 A			TO-236AB	150 °C	SC-59 SOT-23-3 TO-236-3	200 mV		NPN		100 MHz	100 nA	150 hFE
Freescale Semiconductor - NXP PBSS8110D,115	Surface Mount	100 V	1 A	150 hFE	700 mW	6-TSOP	150 °C	SC-74 SOT-457	200 mV	Automotive	NPN	AEC-Q100	100 MHz	100 nA

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General part information

Bipolar (BJT) Transistor NPN 100 V 1 A 100MHz Surface Mount TO-236AB

Technical documentation and resources