Discrete Semiconductor Products

PBSS8110TVL

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PBSS8110T/SOT23/TO-236AB

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Discrete Semiconductor Products

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PBSS8110T/SOT23/TO-236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS8110TVL

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	150
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

100 V, 1 A NPN low VCEsat (BISS) transistor

Part	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Mounting Type	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Package / Case	Qualification	Grade	Current - Collector (Ic) (Max) [Max]	Supplier Device Package
Nexperia USA Inc. PBSS8110X,135	200 mV	2 W	100 V	NPN	Surface Mount	150 °C	150 hFE	100 nA	100 MHz	TO-243AA	AEC-Q100	Automotive	1 A
Nexperia USA Inc. PBSS8110Z,135	200 mV	1.4 W	100 V	NPN	Surface Mount	150 °C	150 hFE	100 nA	100 MHz	TO-261-4 TO-261AA	AEC-Q100	Automotive	1 A	SOT-223
Nexperia USA Inc. PBSS8110TVL	200 mV		100 V	NPN	Surface Mount	150 °C	150	100 nA	100 MHz	SC-59 SOT-23-3 TO-236-3			1 A	TO-236AB
Nexperia USA Inc. PBSS8110D,115	200 mV	700 mW	100 V	NPN	Surface Mount	150 °C	150 hFE	100 nA	100 MHz	SC-74 SOT-457	AEC-Q100	Automotive	1 A	6-TSOP

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General part information

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.

Technical documentation and resources