Discrete Semiconductor Products

KST10MTF

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BIPOLAR - RF TRANSISTOR, NPN, 25 V, 650 MHZ, 350 MW, SOT-23

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Discrete Semiconductor Products

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BIPOLAR - RF TRANSISTOR, NPN, 25 V, 650 MHZ, 350 MW, SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	KST10MTF

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60
Frequency - Transition	650 MHz
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Supplier Device Package	SOT-23-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	25 V

NPN Epitaxial Silicon Transistor

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Transistor Type	Package / Case	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]
ON Semiconductor KST10MTF	SOT-23-3	60	Surface Mount	NPN	SC-59 SOT-23-3 TO-236-3	650 MHz	25 V	350 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources