Discrete Semiconductor Products
RBR10NS60ATL
ActiveRohm Semiconductor
LOW VF, 60V, 10A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE
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Discrete Semiconductor Products
RBR10NS60ATL
ActiveRohm Semiconductor
LOW VF, 60V, 10A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RBR10NS60ATL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 5 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 150 ¯C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | LPDS |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 650 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1000 | $ 0.64 | |
Description
General part information
RBR10NS60A Series
RBR10NS60A is Schottky Barrier Diode for general rectification.
Documents
Technical documentation and resources