Discrete Semiconductor Products

MCMN2014HE3-TP

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N-CHANNEL MOSFET, DFN2020-6LE

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Discrete Semiconductor Products

Active

N-CHANNEL MOSFET, DFN2020-6LE

Technical Specifications

Parameters and characteristics for this part

Specification	MCMN2014HE3-TP

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1791 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-VDFN Exposed Pad
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	DFN2020-6LE
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.1 V

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Micro Commercial Components MCMN2014-TP	15 A	23 nC	1300 pF	Surface Mount	2.5 V	8 V	DFN2020-6J	1.1 V	8 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	12 V	700 mW	8 mOhm
Micro Commercial Components MCMN2014HE3-TP	15 A		1791 pF	Surface Mount	2.5 V	8 V	DFN2020-6LE	1.1 V	8 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	12 V		8 mOhm	6-VDFN Exposed Pad	AEC-Q101	Automotive	48 nC
Micro Commercial Components MCMN2014A-TP	13 A		1791 pF	Surface Mount			DFN2020-6J	1.1 V	10 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	2.2 W	9 mOhm				48 nC	1.8 V 4.5 V

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General part information

N-Channel 12 V 15A Surface Mount DFN2020-6LE

Technical documentation and resources