Specification	SI7336ADP-T1-E3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC
Input Capacitance (Ciss) (Max) @ Vds	5600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max) [Max]	5.4 W
Rds On (Max) @ Id, Vgs	3 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

SI7336 Series

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI7336ADP-T1-GE3	20 V	4.5 V 10 V	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	50 nC	N-Channel	5.4 W	-55 °C	150 °C	MOSFET (Metal Oxide)	3 mOhm	30 A	3 V	30 V	5600 pF
Vishay General Semiconductor - Diodes Division SI7336ADP-T1-E3	20 V	4.5 V 10 V	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	50 nC	N-Channel	5.4 W	-55 °C	150 °C	MOSFET (Metal Oxide)	3 mOhm	30 A	3 V	30 V	5600 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources