Specification	NTP60N06LG

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC
Input Capacitance (Ciss) (Max) @ Vds	3075 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	2.4 W, 150 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	15 V
Vgs(th) (Max) @ Id	2 V

NTP60N06L Series

Power MOSFET 60V 60A 14 mOhm Single N-Channel TO-220 Logic Level

Part	Package / Case	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NTP60N06LG	TO-220-3	2 V	Through Hole	2.4 W 150 W	N-Channel	3075 pF	TO-220	MOSFET (Metal Oxide)	16 mOhm	65 nC	60 V	-55 °C	175 ░C	15 V	60 A	5 V
ON Semiconductor NTP60N06L	TO-220-3	2 V	Through Hole	2.4 W 150 W	N-Channel	3075 pF	TO-220	MOSFET (Metal Oxide)	16 mOhm	65 nC	60 V	-55 °C	175 ░C	15 V	60 A	5 V
ON Semiconductor NTP60N06	TO-220-3	4 V	Through Hole	2.4 W 150 W	N-Channel	3220 pF	TO-220	MOSFET (Metal Oxide)		81 nC	60 V	-55 °C	175 ░C	20 V	60 A	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.

Technical documentation and resources