
Discrete Semiconductor Products
MMBT5962
ObsoleteON Semiconductor
TRANS GP BJT NPN 45V 0.1A 350MW 3-PIN SOT-23 T/R
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Discrete Semiconductor Products
MMBT5962
ObsoleteON Semiconductor
TRANS GP BJT NPN 45V 0.1A 350MW 3-PIN SOT-23 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | MMBT5962 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 2 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 600 |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 350 mW |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 200 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MMBT5962 Series
NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
Documents
Technical documentation and resources