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SOT-23-3
Discrete Semiconductor Products

MMBT5962

Obsolete
ON Semiconductor

TRANS GP BJT NPN 45V 0.1A 350MW 3-PIN SOT-23 T/R

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SOT-23-3
Discrete Semiconductor Products

MMBT5962

Obsolete
ON Semiconductor

TRANS GP BJT NPN 45V 0.1A 350MW 3-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBT5962
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]2 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]600
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]350 mW
Supplier Device PackageSOT-23-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

MMBT5962 Series

NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.