Discrete Semiconductor Products

RJK6012DPE-00#J3

Active

NCH SINGLE POWER MOSFET 600V 10A 920MOHM LDPAK(S)-(1)/TO-263

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

NCH SINGLE POWER MOSFET 600V 10A 920MOHM LDPAK(S)-(1)/TO-263

Technical Specifications

Parameters and characteristics for this part

Specification	RJK6012DPE-00#J3

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	920 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Single Power Mosfet 600V 10A 920Mohm LDPAK(S)-(1)/To-263

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Power Dissipation (Max) [Max]	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK6012DPE-00#J3	10 A	30 nC	N-Channel	MOSFET (Metal Oxide)	100 W	SC-83	Surface Mount	920 mOhm	30 V	150 °C	1100 pF	10 V	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The RJK6012DPE is a Nch Single Power Mosfet 600V 10A 920Mohm LDPAK(S)-(1)/To-263.

Technical documentation and resources