Discrete Semiconductor Products

RJK1001DPP-A0#T2

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MOSFETS POWER TRS1 LV-MOS TO220FP MOS TRENCH D12

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Discrete Semiconductor Products

Active

MOSFETS POWER TRS1 LV-MOS TO220FP MOS TRENCH D12

Technical Specifications

Parameters and characteristics for this part

Specification	RJK1001DPP-A0#T2

Current - Continuous Drain (Id) @ 25°C	80 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	147 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	10000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	30 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	TO-220ABA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 100V 80A 5.5mohm TO-220F

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Mounting Type	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology
Renesas Electronics Corporation RJK1001DPP-A0#T2	5.5 mOhm	30 W	10000 pF	N-Channel	80 A	20 V	TO-220-3	Through Hole	150 °C	10 V	147 nC	TO-220ABA	100 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources