Discrete Semiconductor Products

NTMFS5C426NLT1G

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MOSFET, N-CH, 40V, 237A, SOIC ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 40V, 237A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFS5C426NLT1G

Current - Continuous Drain (Id) @ 25°C	41 A, 237 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	5600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	3.8 W, 128 W
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Single N-Channel Power MOSFET 40V, 237A, 1.2mΩ

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Technology	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTMFS5C426NLT1G	5600 pF	40 V	N-Channel	1.2 mOhm	2 V	5-DFN (5x6)	8-SOFL	-55 °C	175 ░C	41 A 237 A	4.5 V 10 V	20 V	3.8 W 128 W	MOSFET (Metal Oxide)	8-PowerTDFN 5 Leads	Surface Mount	93 nC

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General part information

Power MOSFET 40V, 237A, 1.2 mOhm, Single N-Channel standard gate

Technical documentation and resources