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SOT-23-3
Discrete Semiconductor Products

BCW66G

Obsolete
ON Semiconductor

NPN GENERAL PURPOSE AMPLIFIER

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SOT-23-3
Discrete Semiconductor Products

BCW66G

Obsolete
ON Semiconductor

NPN GENERAL PURPOSE AMPLIFIER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBCW66G
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]160
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]350 mW
Supplier Device PackageSOT-23-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic700 mV
Voltage - Collector Emitter Breakdown (Max)45 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

BCW66G Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.