Discrete Semiconductor Products

PHB45NQ15T,118

LTB

MOSFET N-CH 150V 45.1A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 150V 45.1A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PHB45NQ15T,118

Current - Continuous Drain (Id) @ 25°C	45.1 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type
Freescale Semiconductor - NXP PHB45NQ15T,118	Surface Mount	20 V	D2PAK	32 nC	230 W	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1770 pF	MOSFET (Metal Oxide)	-55 °C	175 ░C	45.1 A	150 V	N-Channel

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General part information

N-Channel 150 V 45.1A (Tc) 230W (Tc) Surface Mount D2PAK

Technical documentation and resources