Specification	NTMFS5C612NT1G

Current - Continuous Drain (Id) @ 25°C	35 A, 230 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60.2 nC
Input Capacitance (Ciss) (Max) @ Vds	4830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	170 W, 3.8 W
Rds On (Max) @ Id, Vgs	1.6 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

NTMFS5C612N Series

Single N-Channel Power Mosfet 60V, 230A, 1.6mΩ

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Supplier Device Package	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type
ON Semiconductor NTMFS5C612NT1G	60 V	35 A 230 A	5-DFN (5x6)	8-SOFL	3.8 W 170 W	4830 pF	20 V	10 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	Surface Mount	60.2 nC	8-PowerTDFN 5 Leads	1.6 mOhm	4 V	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Commercial Power Mosfet in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.