Discrete Semiconductor Products

U3B-M3/9AT

LTB

DIODE GEN PURP 100V 2A DO214AB

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Discrete Semiconductor Products

LTB

DIODE GEN PURP 100V 2A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	U3B-M3/9AT

Capacitance @ Vr, F	25 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed
Vishay General Semiconductor - Diodes Division U3B-M3/9AT	100 V	30 ns	DO-214AB (SMC)	Surface Mount	DO-214AB SMC	2 A	25 pF	900 mV	10 µA	Standard	150 °C	-55 °C	200 mA 500 ns
Vishay General Semiconductor - Diodes Division U3B-M3/57T	100 V	30 ns	DO-214AB (SMC)	Surface Mount	DO-214AB SMC	2 A	25 pF	900 mV	10 µA	Standard	150 °C	-55 °C	200 mA 500 ns
Vishay General Semiconductor - Diodes Division U3B-E3/9AT	100 V	20 ns	DO-214AB (SMC)	Surface Mount	DO-214AB SMC	2 A		900 mV	10 µA	Standard	150 °C	-55 °C	200 mA 500 ns

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General part information

Diode 100 V 2A Surface Mount DO-214AB (SMC)

Technical documentation and resources

No documents available