Discrete Semiconductor Products
RGE60TS65DGC13
NRNDRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
RGE60TS65DGC13
NRNDRohm Semiconductor
5ΜS SHORT-CIRCUIT TOLERANCE, 650V 30A, FRD BUILT-IN, TO-247GE, FIELD STOP TRENCH IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RGE60TS65DGC13 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 51 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Gate Charge | 63 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 166 W |
| Reverse Recovery Time (trr) | 166 ns |
| Supplier Device Package | TO-247GE |
| Switching Energy | 570 µJ, 640 µJ |
| Td (on/off) @ 25°C [custom] | 114 ns |
| Td (on/off) @ 25°C [custom] | 40 ns |
| Test Condition | 30 A, 10 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.05 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RGE60TS65DG Series
RGE60TS65DG is IGBT featuring low switching loss and low conduction loss. It is ideal for Power Conditioner and Welder and General Inverter and UPS
Documents
Technical documentation and resources