Discrete Semiconductor Products

BSS123-TP

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MOSFET N-CH 100V 170MA SOT23

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Discrete Semiconductor Products

Active

MOSFET N-CH 100V 170MA SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BSS123-TP

Current - Continuous Drain (Id) @ 25°C	170 mA
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Micro Commercial Components BSS123-TP	170 mA	6 Ohm	4.5 V 10 V	SC-59 SOT-23-3 TO-236-3	350 mW	60 pF	Surface Mount	SOT-23	2.8 V	100 V	20 V	2 nC	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C

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General part information

N-Channel 100 V 170mA Tj) 350mW Surface Mount SOT-23

Technical documentation and resources