Discrete Semiconductor Products

IXFP34N65X2

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTX2CLASS TO-220AB/FP/ TUBE

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Discrete Semiconductor Products

IXFP34N65X2

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRAJNCTX2CLASS TO-220AB/FP/ TUBE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP34N65X2

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	3330 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	540 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

IXFP34N65X2 Series

DiscMSFT NChUltraJnctX2Class TO-220AB/FP

Part	Mounting Type	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Rds On (Max) @ Id, Vgs
Littelfuse/Commercial Vehicle Products IXFP34N65X2	Through Hole	540 W	-55 °C	150 °C	10 V	TO-220-3	650 V	MOSFET (Metal Oxide)	5.5 V	N-Channel	TO-220-3	3330 pF	34 A	56 nC	30 V	105 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.22
		50	$ 4.18
		100	$ 3.88
		500	$ 3.54
Newark	Each	100	$ 5.04
		500	$ 4.59
		1000	$ 4.05
		2500	$ 3.77

Description

General part information

IXFP34N65X2 Series

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources