Discrete Semiconductor Products

SI5519DU-T1-GE3

Obsolete

MOSFET N/P-CH 20V 6A CHIPFET

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 6A CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI5519DU-T1-GE3

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	17.5 nC
Input Capacitance (Ciss) (Max) @ Vds	660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Dual
Power - Max [Max]	10.4 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	PowerPAK® ChipFet Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.8 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI5519DU-T1-GE3	20 V	660 pF	PowerPAK® ChipFET™ Dual	-55 °C	150 °C	1.8 V	6 A	36 mOhm	MOSFET (Metal Oxide)	Surface Mount	10.4 W	N and P-Channel	17.5 nC	PowerPAK® ChipFet Dual

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 6A 10.4W Surface Mount PowerPAK® ChipFet Dual

Technical documentation and resources

No documents available