Specification	RJK0651DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2030 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-100, SOT-669
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK0651DPB Series

Nch Power MOSFET 60V 25A 14mohm LFPAK56

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK0651DPB-00#J5	2030 pF	45 W	60 V	N-Channel	150 °C	SC-100 SOT-669	MOSFET (Metal Oxide)	4.5 V 10 V	Surface Mount	25 A	15 nC	20 V	LFPAK	14 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.

Technical documentation and resources