Discrete Semiconductor Products

RJK0651DPB-00#J5

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MOSFET, N-CH, 60V, 25A, LFPAK ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, N-CH, 60V, 25A, LFPAK ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0651DPB-00#J5

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15 nC
Input Capacitance (Ciss) (Max) @ Vds	2030 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Nch Power MOSFET 60V 25A 14mohm LFPAK56

Part	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
Renesas Electronics Corporation RJK0651DPB-00#J5	15 nC	4.5 V 10 V	20 V	150 °C	25 A	Surface Mount	MOSFET (Metal Oxide)	14 mOhm	LFPAK	60 V	SC-100 SOT-669	N-Channel	2030 pF	45 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.