Discrete Semiconductor Products

SIB417AEDK-T1-GE3

Obsolete

MOSFET P-CH 8V 9A PPAK SC75-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB417AEDK-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.2 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	18.5 nC
Input Capacitance (Ciss) (Max) @ Vds	878 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6
Power Dissipation (Max)	13 W, 2.4 W
Rds On (Max) @ Id, Vgs	32 mOhm
Supplier Device Package	PowerPAK® SC-75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	1 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
Vishay General Semiconductor - Diodes Division SIB417AEDK-T1-GE3	1.2 V 4.5 V	PowerPAK® SC-75-6	8 V	878 pF	9 A	MOSFET (Metal Oxide)	1 V	5 V	32 mOhm	2.4 W 13 W	PowerPAK® SC-75-6	18.5 nC	Surface Mount	-55 °C	150 °C	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources