BUK9M6R0-40HX

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MOSFET N-CH 40V 50A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 50A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M6R0-40HX

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2470 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	70 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Grade	Qualification	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP BUK9M6R0-40HX	2.15 V	40 V	4.5 V 10 V	2470 pF	MOSFET (Metal Oxide)	Automotive	AEC-Q101	70 W	36 nC	-55 °C	175 ░C	Surface Mount	16 V	-10 V	LFPAK33	6 mOhm	N-Channel	50 A
Freescale Semiconductor - NXP BUK9M6R6-30EX		30 V	5 V	2001 pF	MOSFET (Metal Oxide)	Automotive	AEC-Q101	75 W	18 nC	-55 °C	175 ░C	Surface Mount			LFPAK33	5.3 mOhm	N-Channel	70 A	10 V	2.1 V

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General part information

N-Channel 40 V 50A (Tc) 70W (Tc) Surface Mount LFPAK33

Technical documentation and resources