Discrete Semiconductor Products

SI2333CDS-T1-GE3

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MOSFET P-CH 12V 7.1A SOT23-3

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Discrete Semiconductor Products

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MOSFET P-CH 12V 7.1A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SI2333CDS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	7.1 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1225 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	2.5 W, 1.25 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SI2333CDS-T1-GE3	Surface Mount	8 V	12 V	-55 °C	150 °C	MOSFET (Metal Oxide)	25 nC	7.1 A	35 mOhm	SOT-23-3 (TO-236)	1 V	P-Channel	1.8 V 4.5 V	1225 pF	SC-59 SOT-23-3 TO-236-3	1.25 W 2.5 W

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General part information

P-Channel 12 V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources