IRLIZ24GPBF

LTB

MOSFET N-CHANNEL 60V 14A TO220

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Discrete Semiconductor Products

LTB

MOSFET N-CHANNEL 60V 14A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IRLIZ24GPBF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Package / Case
Vishay General Semiconductor - Diodes Division IRLIZ24GPBF	MOSFET (Metal Oxide)	18 nC	100 mOhm	870 pF	60 V	Through Hole	TO-220 Full Pack	4 V 5 V	37 W	-55 °C	175 ░C	14 A	2 V	N-Channel	10 V	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.44

General part information

N-Channel 60 V 14A (Tc) 37W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources