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100-TQFP
Integrated Circuits (ICs)

71V67803S133PFG8

Obsolete
Renesas Electronics Corporation

3.3V 512K X 18 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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100-TQFP
Integrated Circuits (ICs)

71V67803S133PFG8

Obsolete
Renesas Electronics Corporation

3.3V 512K X 18 SYNCHRONOUS 3.3V I/O PIPELINED SRAM

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Technical Specifications

Parameters and characteristics for this part

Specification71V67803S133PFG8
Access Time4.2 ns
Clock Frequency133 MHz
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization512 K
Memory Size9 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]70 °C
Operating Temperature [Min]0 °C
Package / Case100-LQFP
Supplier Device Package100-TQFP (14x14)
TechnologySRAM - Synchronous, SDR
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

71V67803 Series

3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM

PartOperating Temperature [Max]Operating Temperature [Min]Memory FormatVoltage - Supply [Max]Voltage - Supply [Min]Package / CaseTechnologyClock FrequencyMemory TypeSupplier Device PackageMemory OrganizationMemory SizeMemory InterfaceMounting TypeAccess Time
100-TQFP
Renesas Electronics Corporation
70 °C
0 °C
SRAM
3.465 V
3.135 V
100-LQFP
SRAM - Synchronous
SDR
166 MHz
Volatile
100-TQFP (14x14)
512 K
9 Mbit
Parallel
Surface Mount
165-TBGA
Renesas Electronics Corporation
85 °C
-40 °C
SRAM
3.465 V
3.135 V
165-TBGA
SRAM - Standard
150 MHz
Volatile
165-CABGA (13x15)
512 K
9 Mbit
Parallel
Surface Mount
3.8 ns
165-TBGA
Renesas Electronics Corporation
70 °C
0 °C
SRAM
3.465 V
3.135 V
165-TBGA
SRAM - Synchronous
SDR
166 MHz
Volatile
165-CABGA (13x15)
512 K
9 Mbit
Parallel
Surface Mount
71V67803 - Block Diagram
Renesas Electronics Corporation
70 °C
0 °C
SRAM
3.465 V
3.135 V
100-LQFP
SRAM - Synchronous
SDR
166 MHz
Volatile
100-TQFP (14x14)
512 K
9 Mbit
Parallel
Surface Mount
119-BGA
Renesas Electronics Corporation
70 °C
0 °C
SRAM
3.465 V
3.135 V
119-BGA
SRAM - Synchronous
SDR
166 MHz
Volatile
119-PBGA (14x22)
512 K
9 Mbit
Parallel
Surface Mount
71V67803 - Block Diagram
Renesas Electronics Corporation
70 °C
0 °C
SRAM
3.465 V
3.135 V
119-BGA
SRAM - Synchronous
SDR
133 MHz
Volatile
119-PBGA (14x22)
512 K
9 Mbit
Parallel
Surface Mount
4.2 ns
100-TQFP
Renesas Electronics Corporation
70 °C
0 °C
SRAM
3.465 V
3.135 V
100-LQFP
SRAM - Synchronous
SDR
150 MHz
Volatile
100-TQFP (14x14)
512 K
9 Mbit
Parallel
Surface Mount
3.8 ns
100-TQFP
Renesas Electronics Corporation
85 °C
-40 °C
SRAM
3.465 V
3.135 V
100-LQFP
SRAM - Synchronous
SDR
133 MHz
Volatile
100-TQFP (14x14)
512 K
9 Mbit
Parallel
Surface Mount
4.2 ns
165-TBGA
Renesas Electronics Corporation
85 °C
-40 °C
SRAM
3.465 V
3.135 V
165-TBGA
SRAM - Synchronous
SDR
133 MHz
Volatile
165-CABGA (13x15)
512 K
9 Mbit
Parallel
Surface Mount
4.2 ns
100-TQFP
Renesas Electronics Corporation
70 °C
0 °C
SRAM
3.465 V
3.135 V
100-LQFP
SRAM - Synchronous
SDR
133 MHz
Volatile
100-TQFP (14x14)
512 K
9 Mbit
Parallel
Surface Mount
4.2 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V67803 Series

The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources