Discrete Semiconductor Products

AOD2916

Obsolete

MOSFET N CH 100V 5.5A TO252

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Discrete Semiconductor Products

Obsolete

MOSFET N CH 100V 5.5A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	AOD2916

Current - Continuous Drain (Id) @ 25°C	25 A, 5.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	2.5 W, 50 W
Rds On (Max) @ Id, Vgs	34 mOhm
Supplier Device Package	TO-252 (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOD2910E	37 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	TO-252 (DPAK)
Alpha & Omega Semiconductor Inc. AOD2916	5.5 A 25 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	TO-252 (DPAK)	2.5 W 50 W	20 V	870 pF	34 mOhm	20 nC	MOSFET (Metal Oxide)	100 V	175 °C	-55 °C	N-Channel	2.7 V	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 5.5A (Ta), 25A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252 (DPAK)

Technical documentation and resources