Discrete Semiconductor Products

FCI11N60

Obsolete

MOSFET N-CH 600V 11A I2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 11A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FCI11N60

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	1490 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor FCI11N60	I2PAK TO-262-3 Long Leads TO-262AA	600 V	Through Hole	30 V	52 nC	MOSFET (Metal Oxide)	5 V	-55 °C	150 °C	TO-262 (I2PAK)	380 mOhm	10 V	125 W	N-Channel	1490 pF	11 A
ON Semiconductor FCI11N60	I2PAK TO-262-3 Long Leads TO-262AA	600 V	Through Hole	30 V	52 nC	MOSFET (Metal Oxide)	5 V	-55 °C	150 °C	TO-262 (I2PAK)	380 mOhm	10 V	125 W	N-Channel	1490 pF	11 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 11A (Tc) 125W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources