Discrete Semiconductor Products

SIA453EDJ-T1-GE3

Obsolete

MOSFET P-CH 30V 24A PPAK SC70-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 24A PPAK SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIA453EDJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	18.5 mOhm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type
Vishay General Semiconductor - Diodes Division SIA453EDJ-T1-GE3	12 V	30 V	MOSFET (Metal Oxide)	66 nC	150 °C	-50 °C	P-Channel	18.5 mOhm	PowerPAK® SC-70-6	10 V	2.5 V	1900 pF	1.4 V	PowerPAK® SC-70-6	24 A	3.5 W 19 W	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 24A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources

No documents available