Specification	NTJD3158CT2G

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	630 mA, 820 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	3 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	270 mW
Rds On (Max) @ Id, Vgs	375 mOhm
Supplier Device Package	SC70-6, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

NTJD3158C Series

Small Signal MOSFET 20V 630mA 375 mOhm Dual Complementary SC−88/SC70−6/SOT−363

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	FET Feature	Supplier Device Package	Mounting Type	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
ON Semiconductor NTJD3158CT2G	3 nC	MOSFET (Metal Oxide)	46 pF	20 V	N and P-Channel	Logic Level Gate	SC-88 SC70-6 SOT-363	Surface Mount	270 mW	630 mA 820 mA	375 mOhm	6-TSSOP SC-88 SOT-363	-55 °C	150 °C	1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET, 20V, +0.63/-0.82A, SC-88 Complementary

Technical documentation and resources