Discrete Semiconductor Products

FQAF58N08

Obsolete

MOSFET N-CH 80V 44A TO3PF

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 80V 44A TO3PF

Technical Specifications

Parameters and characteristics for this part

Specification	FQAF58N08

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-3P-3 Full Pack
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs [Max]	24 mOhm
Supplier Device Package	TO-3PF
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
ON Semiconductor FQAF58N08	80 V	65 nC	MOSFET (Metal Oxide)	44 A	-55 °C	175 ░C	85 W	25 V	10 V	TO-3P-3 Full Pack	4 V	24 mOhm	TO-3PF	Through Hole	1900 pF	N-Channel
ON Semiconductor FQAF5N90	900 V	40 nC	MOSFET (Metal Oxide)	4.1 A	-55 °C	150 °C		30 V	10 V	TO-3P-3 Full Pack	5 V		TO-3PF	Through Hole	1550 pF	N-Channel	90 W	2.3 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 80 V 44A (Tc) 85W (Tc) Through Hole TO-3PF

Technical documentation and resources

No documents available