Discrete Semiconductor Products

PJQ4408P_R2_00001

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30V N-CHANNEL ENHANCEMENT MODE M

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Discrete Semiconductor Products

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30V N-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4408P_R2_00001

Current - Continuous Drain (Id) @ 25°C	42 A, 10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.1 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2 W, 35 W
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Mounting Type	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]
Panjit International Inc. PJQ4408P_R2_00001	20 V	N-Channel	9 mOhm	Surface Mount	2 W 35 W	2.5 V	MOSFET (Metal Oxide)	DFN3333-8	8-PowerVDFN	30 V	7.1 nC	10 A 42 A	4.5 V 10 V	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 10A (Ta), 42A (Tc) 2W (Ta), 35W (Tc) Surface Mount DFN3333-8

Technical documentation and resources

No documents available