Discrete Semiconductor Products

SI3495DV-T1-GE3

Obsolete

MOSFET P-CH 20V 5.3A 6TSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 5.3A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3495DV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.1 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	750 mV

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SI3495DV-T1-GE3	1.5 V 4.5 V	1.1 W	P-Channel	-55 °C	150 °C	6-TSOP	38 nC	20 V	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	Surface Mount	5.3 A	24 mOhm	5 V	750 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP

Technical documentation and resources