Discrete Semiconductor Products

PJQ2463A-AU_R1_000A1

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DFN2020B-6L, MOSFET

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Discrete Semiconductor Products

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DFN2020B-6L, MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ2463A-AU_R1_000A1

Current - Continuous Drain (Id) @ 25°C	3.2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	785 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	DFN2020B-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Qualification	Grade
Panjit International Inc. PJQ2463A_R1_00001	20 V	2.5 V	785 pF	4.5 V 10 V	2 W	105 mOhm	Surface Mount	150 °C	-55 °C	P-Channel	3.2 A	10 nC	60 V	DFN2020B-6	MOSFET (Metal Oxide)
Panjit International Inc. PJQ2463A-AU_R1_000A1	20 V	2.5 V	785 pF	4.5 V 10 V	2 W	105 mOhm	Surface Mount	150 °C	-55 °C	P-Channel	3.2 A	10 nC	60 V	DFN2020B-6	MOSFET (Metal Oxide)	AEC-Q101	Automotive

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General part information

P-Channel 60 V 3.2A (Ta) 2W (Ta) Surface Mount DFN2020B-6

Technical documentation and resources