Specification	FQP8P10

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs [Max]	530 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQP8N60C Series

Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220

Part	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQP8N60C	1255 pF	N-Channel	4 V	10 V	600 V	1.2 Ohm	7.5 A	147 W	30 V	TO-220-3	36 nC	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3
ON Semiconductor FQP8P10	470 pF	P-Channel	4 V	10 V	100 V		8 A	65 W	30 V	TO-220-3		Through Hole	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-220-3	530 mOhm
ON Semiconductor FQP8N60C	1255 pF	N-Channel	4 V	10 V	600 V	1.2 Ohm	7.5 A	147 W	30 V	TO-220-3	36 nC	Through Hole	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-220-3

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQP8N60C Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.