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onsemi-NVF3055L108T1G MOSFETs Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Discrete Semiconductor Products

NZT6717

Obsolete
ON Semiconductor

TRANS GP BJT NPN 80V 1.2A 1000MW 4-PIN(3+TAB) SOT-223 T/R

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onsemi-NVF3055L108T1G MOSFETs Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
Discrete Semiconductor Products

NZT6717

Obsolete
ON Semiconductor

TRANS GP BJT NPN 80V 1.2A 1000MW 4-PIN(3+TAB) SOT-223 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNZT6717
Current - Collector (Ic) (Max) [Max]1.2 A
Current - Collector Cutoff (Max) [Max]100 nA
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]1 W
Supplier Device PackageSOT-223-4
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NZT6715 Series

NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38.