
Discrete Semiconductor Products
NZT6717
ObsoleteON Semiconductor
TRANS GP BJT NPN 80V 1.2A 1000MW 4-PIN(3+TAB) SOT-223 T/R
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
NZT6717
ObsoleteON Semiconductor
TRANS GP BJT NPN 80V 1.2A 1000MW 4-PIN(3+TAB) SOT-223 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NZT6717 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power - Max [Max] | 1 W |
| Supplier Device Package | SOT-223-4 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NZT6715 Series
NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38.
Documents
Technical documentation and resources