Discrete Semiconductor Products

FQP90N08

Obsolete

ON Semiconductor

MOSFET N-CH 80V 71A TO220-3

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

FQP90N08

Obsolete

ON Semiconductor

MOSFET N-CH 80V 71A TO220-3

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQP90N08

Current - Continuous Drain (Id) @ 25°C	71 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

FQP9N90C Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, 900 V, 8.0 A, 1.4 Ω, TO-220

Part	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FQP9N25C	30 V	8.8 A	N-Channel	710 pF	-55 °C	150 °C	35 nC	MOSFET (Metal Oxide)	74 W	10 V	430 mOhm	250 V	TO-220-3	TO-220-3	Through Hole	4 V
ON Semiconductor FQP9N08L	20 V	9.3 A	N-Channel	280 pF	-55 °C	150 °C		MOSFET (Metal Oxide)			210 mOhm	80 V	TO-220-3	TO-220-3	Through Hole	5 V	40 W	10 V	5 V
ON Semiconductor FQP9N25CTSTU	30 V	8.8 A	N-Channel	710 pF	-55 °C	150 °C	35 nC	MOSFET (Metal Oxide)	74 W	10 V	430 mOhm	250 V	TO-220-3	TO-220-3	Through Hole	4 V
ON Semiconductor FQP9N50	30 V	9 A	N-Channel	1450 pF	-55 °C	150 °C		MOSFET (Metal Oxide)		10 V	730 mOhm	500 V	TO-220-3	TO-220-3	Through Hole	5 V	147 W			36 nC
ON Semiconductor FQP90N08	25 V	71 A	N-Channel		-55 °C	175 ░C	110 nC	MOSFET (Metal Oxide)		10 V	16 mOhm	80 V	TO-220-3	TO-220-3	Through Hole	4 V					3250 pF
ON Semiconductor FQP90N10V2	30 V	90 A	N-Channel		-55 °C	175 ░C	191 nC	MOSFET (Metal Oxide)	250 W	10 V	10 mOhm	100 V	TO-220-3	TO-220-3	Through Hole	4 V					6150 pF
ON Semiconductor FQP9P25	30 V	9.4 A	P-Channel		-55 °C	150 °C	38 nC	MOSFET (Metal Oxide)		10 V	620 mOhm	250 V	TO-220-3	TO-220-3	Through Hole	5 V	120 W
ON Semiconductor FQP9N90C	30 V	8 A	N-Channel		-55 °C	150 °C	58 nC	MOSFET (Metal Oxide)		10 V	1.4 Ohm	900 V	TO-220-3	TO-220-3	Through Hole	5 V	205 W
ON Semiconductor FQP9N30	30 V	9 A	N-Channel		-55 °C	150 °C	22 nC	MOSFET (Metal Oxide)	98 W	10 V	450 mOhm	300 V	TO-220-3	TO-220-3	Through Hole	5 V					750 pF
ON Semiconductor FQP9N08L	20 V	9.3 A	N-Channel	280 pF	-55 °C	150 °C		MOSFET (Metal Oxide)			210 mOhm	80 V	TO-220-3	TO-220-3	Through Hole	5 V	40 W	10 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FQP9N90C Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Documents

Technical documentation and resources