IXXN110N65C4H1
ActiveTRANS IGBT CHIP N-CH 650V 210A 750W 4-PIN SOT-227B
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IXXN110N65C4H1
ActiveTRANS IGBT CHIP N-CH 650V 210A 750W 4-PIN SOT-227B
Technical Specifications
Parameters and characteristics for this part
| Specification | IXXN110N65C4H1 |
|---|---|
| Configuration | Single |
| Current - Collector (Ic) (Max) [Max] | 210 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| IGBT Type | PT |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 3.69 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | False |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power - Max [Max] | 750 W |
| Supplier Device Package | SOT-227B |
| Vce(on) (Max) @ Vge, Ic | 2.35 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
Trench Series
Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10µs Short Circuit Safe Operating Area (SCSOA). These IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) and with 650V breakdown voltage, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Advantages: Hard-switching capabilities High power densities Sonic Diodes with temperature stability of diode forward voltage VF Low gate drive requirements
