Discrete Semiconductor Products

KSH112TM

Obsolete

NPN SILICON DARLINGTON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

NPN SILICON DARLINGTON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSH112TM

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	20 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	1000
Frequency - Transition	25 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN Silicon Darlington Transistor

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Supplier Device Package	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type
ON Semiconductor KSH112GTM	20 µA	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	150 °C	1000	100 V	1.75 W	25 MHz	Surface Mount	2 A
ON Semiconductor KSH117ITU	20 µA	3 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK	150 °C	1000	100 V	1.75 W	25 MHz	Through Hole	2 A	PNP - Darlington
ON Semiconductor KSH112TF	20 µA	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	150 °C	1000	100 V	1.75 W	25 MHz	Surface Mount	2 A
ON Semiconductor KSH112TM	20 µA	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	150 °C	1000	100 V	1.75 W	25 MHz	Surface Mount	2 A
ON Semiconductor KSH117TF	20 µA	3 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	150 °C	1000	100 V	1.75 W	25 MHz	Surface Mount	2 A	PNP - Darlington
ON Semiconductor KSH112ITU	20 µA	3 V	IPAK TO-251-3 Short Leads TO-251AA	IPAK	150 °C	1000	100 V	1.75 W	25 MHz	Through Hole	2 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$