Discrete Semiconductor Products

SBE818-TL-E

Obsolete

DIODE ARRAY SCHOTTKY 30V 2A 8EMH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

DIODE ARRAY SCHOTTKY 30V 2A 8EMH

Technical Specifications

Parameters and characteristics for this part

Specification	SBE818-TL-E

Current - Average Rectified (Io) (per Diode)	2 A
Current - Reverse Leakage @ Vr	7.5 µA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Reverse Recovery Time (trr)	10 ns
Speed	200 mA, 500 ns
Supplier Device Package	8-EMH
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	620 mV

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Technology	Speed	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]
ON Semiconductor SBE818-TL-E	10 ns	2 A	7.5 µA	Schottky	200 mA 500 ns	620 mV	8-EMH	Surface Mount	-55 °C	125 °C	2 Independent	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 30 V 2A Surface Mount 8-SMD, Flat Leads

Technical documentation and resources

No documents available