Discrete Semiconductor Products

HAT2088R-EL-E

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MOSFET N-CH 200V 2A 8SOP

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Discrete Semiconductor Products

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MOSFET N-CH 200V 2A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	HAT2088R-EL-E

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	440 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Technology	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature
Renesas Electronics Corporation HAT2088R-EL-E	Surface Mount	2 A	N-Channel	440 mOhm	MOSFET (Metal Oxide)	30 V	8-SOIC	3.9 mm	0.154 in	10 V	2.5 W	450 pF	8-SOP	13 nC	200 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 2A (Ta) 2.5W (Ta) Surface Mount 8-SOP

Technical documentation and resources