Discrete Semiconductor Products

SIB457EDK-T1-GE3

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MOSFET P-CH 20V 9A PPAK SC75-6

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Discrete Semiconductor Products

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MOSFET P-CH 20V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB457EDK-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6
Power Dissipation (Max)	13 W, 2.4 W
Rds On (Max) @ Id, Vgs [Max]	35 mOhm
Supplier Device Package	PowerPAK® SC-75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIB457EDK-T1-GE3	-55 °C	150 °C	44 nC	35 mOhm	9 A	PowerPAK® SC-75-6	1 V	8 V	Surface Mount	P-Channel	4.5 V	MOSFET (Metal Oxide)	2.4 W 13 W	PowerPAK® SC-75-6	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources