Discrete Semiconductor Products
RY7P250BMTBC
ActiveRohm Semiconductor
NCH 100V 300A, DFN8080-8S, WIDE-SOA POWER MOSFET
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Discrete Semiconductor Products
RY7P250BMTBC
ActiveRohm Semiconductor
NCH 100V 300A, DFN8080-8S, WIDE-SOA POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | RY7P250BMTBC |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 250 A, 300 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 15900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 340 W |
| Rds On (Max) @ Id, Vgs | 1.86 mOhm |
| Supplier Device Package | DFN8080T8LSHAAI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 8.35 | |
Description
General part information
RY7P250BM Series
RY7P250BM is a power MOSFET with low-on resistance and high power package, suitable for Hot Swap Controller (HSC).
Documents
Technical documentation and resources